Investigation of the Effect of the Chemical Bond on the Electronic Properties of Multi-Component Semiconductors

摘要

Detailed investigations on the solid solubilities of CdTe and InTe in PbTe and SnTe, as well as of CdSe and InSe in PbSe were carried out, and pertinent information on the resulting pseudo binary systems was collected. Selected alloys were measured for their electrical properties and the crystallographic and electrical information was used to gain a better understanding about the applicability and limitations of a chemical bond approach to compound semiconductors. The phase diagram of the boron-platinum system was determined and phase information on systems of boron with the elements of groups Ib and IIb and the heavier elements of groups IIIa, IVa, Va, and VIa was collected. Some experiments on the solution growth of the red rhombohedral alpha-boron modification were carried out. (Author)