Development of a Low-Noise Millimeter-Wave Parametric Amplifier

摘要

A gain of 20 db and a bandwidth of 50 Mc was obtained at 30 Gc from a scale model of the 94 Gc amplifier. Measurements performed at 90 Gc on the latest group of diodes received from USAECOM (designated Lost S-80B) indicate that their cut-off frequency at zero bias is greater than 300 Gc. Selected diodes from this group have been pumped at 120 Gc and appear suitable for use in the 90-Gc amplifier. (Author)