INTERIM DEVELOPMENT REPORT NO. 2 For DEVELOPMENT OF INTEGRATED CIRCUITS UTILIZING COMPLEMENTARY TRANSISTORS This Report Covers the Period 1 October to 31 December 1365

摘要

Installation of systems for the deposition of both doped and undated layers of silicon dioxide has been completed. Work on the preparation of substrates containing isolated n and p regions is slightly behind schedule, but some major obstacles have been overcome'. Preliminary design of the circuit has been completed and a discussion of it is included in this report.