On the Analysis of Thermally Stimulated Processes in Crystals

摘要

The relation between thermoluminescence curves and thermally stimulated current curves is discussed assuming that electrons are stimulated from traps to recombination centers through the conduction band. A method for calculating the recombination probability by simultaneous measurement of thermoluminescence and thermally stimulated current is given. Some special cases are discussed more thoroughly, especially the case of an extrinsic semiconductor (semiconducting diamond for example), heated according to a hyperbolic heating programme. A preliminary comparison of theory and experiment is made. (Author)