Production Engineering Measure to Investigate Properties of Indium Antimonide and to Provide 801-C6 Infrared Detectors

摘要

Methods of attaining indium antimonide with sufficient properties to enable fabrication of high-performance detectors have been established. Crystal growth techniques using very pure material provide low-initial-carrierconcentration, high-mobility crystals. High-quality material has also been purchased from commercial vendors. Low-noise characteristics are obtained due to deposition of ohmic contacts and effective surface passivation. Preproduction qualification detectors passed all testing requirements, thereby proving the reliability of the dewars. The twelve units had electrical parameters that exceeded contract requirements. Yields obtained during the production run averaged around 35%. The unbalanced pilot line demonstrated the rates as prescribed in the Pilot Line-Manufacturing-Area diagram. Forth-one detectors have been manufactured and acceptance testing has been completed. Average detectivity attained on the cells produced was 11.0 x 10 to the 9th power cm(cps) to the 1/2 power/watt. Other parameters met all requirements. (Author)