TRANSISTOR, VHF, SILICON, POWER TYPE EL-2N (X-9) 5W 500Mc PEM

摘要

The program plan was completed during the first quarter and submitted to the Electronics Command.nDesign improvements, principally in the package design, have been made during this quarter to improve the performance of the 10 watt, 500Mc Research and Development device to meet the 10 dB power gain, 50% collector efficiency goals. Optimized pattern designs were also investigated.nDiffusion of the first wafers has taken place with good results.nWork on contact metallizing was directed at reducing wafer breakage, emitter-base shorting, and at improving thickness control. Work was started on sputtering of alternate contact metals.