DEVELOPMENT OF INTEGRATED CIRCUITS UTILIZING COMPLEMENTARY TRANSISTORS

摘要

Complementary pnp-npn bipolar integrated circuits can be fabricated by diffusing from a doped oxide source that is deposited on the Silicon surface. This technique, wherein the doped oxide is deposited at a low temperature by the thermal oxidation of SiH4, makes possible the simultaneous diffusion of oppositely doped impurities, so that "mirror image" pnp-npn characteristics can be achieved.