FABRICATION AND EVALUATION OF SILICON EPITAXIAL FILMS MADE BY THE PYROLYTIC DE-COMPOSITION OF SILICON TETRACHLORIDE

摘要

This paper is mainly concerned with a particular aspect of single crystal epitaxy: The method used to pre¬pare a single crystal silicon epitaxial film on a single crystal silicon substrate by the pyrolytic decomposition of silicon tetrachloride. Questions of lattice constant match¬ing obviously will not pertain to this discussion since both the substrate and film are of the same material. There are, however, several other requirements which must be met in order to insure that a single crystal rather than polycrystal deposition occurs.