Transistor, VHF, Silicon, Power Type El-2N (X-9) 5W 500 mc Pem

机译：晶体管，VHF，硅，功率型El-2N（X-9）5W 500 mc pem

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Processing of lots to determine the optimum diffusion depth was completed. Sputtered metallizing was accomplished. Continued package evaluation was undertaken and the results lead to a decision on the most suitable package. (Author)

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Clarke, R.; Crishal, J.; Rice, J.; Thompson, C.; Weisenberger, W.;
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年度 1966
页码 p.1-52
总页数 52
原文格式 PDF
正文语种 eng
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关键词
Transistors ; Manufacturing methods ; Silicon ; Ultrahigh frequency ; Radiofrequency power ; Packaging ; Sputtering ; Diffusion ; Performance(Engineering) ; Design;

机译：晶体管;制造方法;硅;超高频;射频功率;封装;溅射;扩散;性能（工程）;设计;

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机译：基于VHF推挽功率MOS晶体管的144 MHZ通道的ACKA 500瓦功率放大器
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3. Au-Catalyzed Silicon Nanoneedles Synthesized from Pure Silane Gas at Various RF Powers on Silicon Substrate by VHF-PECVD [J] . Habib Hamidinezhad, Yussof Wahab, Zulkafli Othaman, Plasmonics . 2011,第4期

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4. Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band [C] . Chang Chia-Hua, Hsu Heng-Tung, Huang Lu-Che, 2012 Asia-Pacific Microwave Conference Proceedings. . 2012

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5. Development of silicon germanium-based power heterojunction bipolar transistors and their application to microwave power amplification. [D] . Ma, Zhenqiang. 2001

机译：基于硅锗的功率异质结双极晶体管的开发及其在微波功率放大中的应用。
6. Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation [O] . Antonio Martinez, John R. Barker 2020

机译：硅纳米线FET晶体管中的量子传输：热电子和局部功耗
7. ACKA 500 WATT POWER AMPLIFIER FOR A 144 MHZ CHANNEL BASED ON A VHF PUSH-PULL POWER MOS TRANSISTOR [O] . Agus Harjoko, Tri Wahyu Supardi 2013

机译：基于VHF推挽功率MOS晶体管的144 MHZ通道的ACKA 500瓦功率放大器
8. Transistor, VHF, Silicon, Power Type El-2n (X-9) 5w 500 mc Pem [R] . Clarke, R., Crishal, J., Rice, J., 1966

机译：晶体管，VHF，硅，功率型El-2n（X-9）5w 500 mc pem

Transistor, VHF, Silicon, Power Type El-2N (X-9) 5W 500 mc Pem

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