High Speed Semiconductor Switch (Two Terminal) and High Speed Semiconductor Switch (Gate)

摘要

The report presents the results obtained from preproduction testing of three device types, details of circuitry considerations of turn-on time measurements, results of investigation of gate-cathode impedance of the 2N1765 device type, and evaluation of 3-terminal reliability and 2-terminal dv/dt problems. Preliminary investigation of producing a device with electrical characteristics similar to the 2N1765 but housed in a 7/16 inch stud package was performed and the results are reported. (Author)