FIELD EFFECT TRIODES AND SPACE CHARGE LIMITED TRIODES.

摘要

Field effect triodes. A detailed conduction mechanism for thin-film field effect triodes is presented. New experimental findings seem to substantiate the trap-emptying mechanism. The results of varying SiO and CdS thickness in field-effect triodes and their effect on device performance are shown. Effects of device aging and electrode configurations on device performance are also discussed. Space charge limited triodes. The requirements for producing space charge limited current in devices are discussed,and possible methods of fulfilling them are presented. Cadmium sulfide improvement. A post-deposition treatment of cadmium sulfide films is outlined and results are presented. Zinc oxide material improvement. The difficulties in evaporation of zinc oxide are discussed and the results of these experiments are presented. (Author)