Dependence of Pulse Amplitude and Polarity on Position of Entry in a Solid-State Particle Detector

摘要

The dependence of pulse height and polarity on the point of entry by an incident energetic particle on a P-N type silicon solid-state radiation detector was investigated. It is shown that the application of an external bias across the base material (P type) alters the charge carrier collection characteristics of the solid-state radiation detector sufficiently to produce these observed changes in the recorded signal. This effect is attributed to the difference in mobilities between holes and electrons generated by the incident energetic particle and the influence of injected carriers on the space charge region. It is also shown that the collection time of charge carriers within the space charge region is not dependent on position of entry by the incident particle while the collection time of charge carriers outside the space charge region is position dependent. (Author)