Recent Developments in Solid-State Microwave Devices

摘要

The purpose of this report is to review some of the outstanding accomplishments in the field of solid-state microwave devices which have occurred during the past 18 months. The latest improvements in parametric amplifiers and transistor amplifiers are noted. The area of microwave solid-state oscillators is discussed in detail by dividing it into three parts; transistor oscillators and multipliers, avalanche transit time (Read) diodes, and Gunn oscillators. Curves are presented which indicate the current state of the art of transistor sources. The mechanisms of the avalanche transit time diode and the Gunn oscillator are described in a qualitative manner. A brief discussion is given about the new circuit and device packaging techniques and Schottky-barrier mixer diodes which are being developed to improve microwave receivers. A few examples of microwave modules, using hybrid techniques are given, and some examples of microwave integrated circuits are noted. It is concluded that the solid-state microwave field is in a stage of rapid growth and changing technology, and that this expansion will continue in its rapid pace, due to the development of improved transistors, bulk-effect devices, hybrid and integrated circuit modules. (Author)