首页> 美国政府科技报告 >Production Engineering Measure. Transistor, VHF, Silicon, Power 25 Watt, 100 mc
【24h】

Production Engineering Measure. Transistor, VHF, Silicon, Power 25 Watt, 100 mc

机译:生产工程措施。晶体管,VHF,硅,功率25瓦,100 mc

获取原文

摘要

This work covers the progress during the period 1 April 1965 to 31 July 1966. Processing of lots in pre-production continues to give assurance of good yields on a controllable basis. The change to a silicone molded package has given yield, package integrity, strength, and cost advantages over the older micropower package. The technique of using emitter and base stabilized resistors added to the crystal pattern of the original design gives improved saturated power handling and linearity. Temperature tests run by I. R. techniques show that the device is evenly balanced and stabilized. The efficiency and power gain is substantially increased by over 10% and 2DB over the original devices. The design has been optimized for 25 watts and is proving out in field tests. (Author)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号