Surface Properties of Germanium Semiconductors

机译：锗半导体的表面特性

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

A study was made to obtain information concerning the extent and mechanism of the adsorption of gases on clean and oxide-covered surfaces of germanium semiconductors, and to learn in specific cases whether or not changes in bulk doping affect the behavior of semiconductor surfaces. (Author)

著录项

作者
Zettlemoyer, A. C.; Iyengar, R. D.; Pravdic, V. H.; Block, W. M.; Wilcox, A. E.;
展开▼
作者单位

展开▼
年度 1966
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类
关键词
Germanium ; Semiconductors ; Surface properties ; Doping ; Adsorption ; Gases ; Oxides ; Coatings;

机译：锗;半导体;表面特性;掺杂;吸附;气体;氧化物;涂层;

相似文献

外文文献
中文文献
专利

1. High magnetic field dependence of the Hall coefficient in n‐type germanium and in other semiconductors with ellipsoidal surfaces of constant energy [J] . Journal of Applied Physics . 1976,第3期

机译：n型锗和具有恒定能量的椭圆形表面的其他半导体中霍尔系数对磁场的高依赖性
2. Electrical properties of germanium-based insulator-semiconductor structures with an insulating layer of polynucleotides, and their monomer components on the surface [J] . Yafyasov A.M., Bakulev V.M., Konorov P.P., Semiconductors . 2011,第12期

机译：具有多核苷酸绝缘层的锗基绝缘体-半导体结构的电特性及其表面上的单体成分
3. Lead-Free Perovskite Semiconductors Based on Germanium-Tin Solid Solutions: Structural and Optoelectronic Properties [J] . Nagane Satyawan, Ghosh Dibyajyoti, Hoye Robert L. Z., The journal of physical chemistry, C. Nanomaterials and interfaces . 2018,第11期

机译：基于锗锡固体解决方案的无铅钙钛矿半导体：结构和光电性质
4. Correlation of Nanoscale Structure and Magnetic Properties in Manganese Doped Germanium Dilute Magnetic Semiconductors [C] . Li He, Wenjing Yin, Jiani Yu, MRS fall meeting . 2012

机译：锰掺杂锗稀磁半导体的纳米结构与磁性能的相关性
5. Theoretical analysis of the optical properties of GaAs(001) surfaces and the strain-dependent lattice properties of semiconductors [D] . Eryigit, Resul 1997

机译：GaAs（001）表面的光学性质的理论分析和半导体的应变依赖性晶格特性
6. Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements [O] . Thomas P. Weiss, Benjamin Bissig, Thomas Feurer, -1

机译：时间分辨光致发光测量中具有不同表面处理的薄膜半导体的体相和表面复合特性
7. Effect of Bi Additions upon the Physical Properties of Germanium Telluride Glassy Semiconductors [O] . Ambika Sharma, P. B. Barman 2016

机译：Bi添加量对碲化锗玻璃半导体物理性质的影响
8. Optical properties of semiconductors under hydrostatic pressure—I. Germanium☆ [R] . William Paul, D. M. Warschauer 1957

机译：静水压下半导体的光学特性-I。锗☆

Surface Properties of Germanium Semiconductors

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅