RADIATION EFFECTS ON INSULATED GATE FIELD EFFECT (MOS) INTEGRATED CIRCUITS

摘要

A report is given which covers the firot quarter's effort of a study to determine the transient and permanent effects of pulsed nuclssr radiation on MOS integrated circuits. This effort was oriented in three major areas. The areas ore a literature survey, a theoretical analysis, and a selection of parts for transient radiation effects testing. The literature survey revealed that the primary effort, to date, on pulsed radiation effects in KOS do vices has been associated with the collection of selected experimental data followed by suggested explanation of possible response mechanisms. The experimental data obtained to date, is limited to five low energy flash x-ray (< 600 kev) studies and two policed reactor studies on MOS transistors. Ho data on MOS circuits have been reported.