Annealing of gamma-Ray Induced Defects in Bi-Doped Germanium

摘要

A preliminary study was made of the isochronal annealing of gamma-ray induced defects in bismuth-doped germanium in the temperature range 318 to 523 K. Comparison of the results with previous studies on arsenic- and antimony-doped germanium confirms that the annealing processes in gamma-irradiated n-type germanium are strongly dependent on type of donor impurity. A possible explanation is given for the differences in the annealing behavior, based on differences in the covalent sizes of the donors. (Author)