Investigation of a Pin-Structure Germanium Photo-Voltaic Cell

摘要

A solution to the V-I characteristics of planar P-I-N TPV converter diodes is developed and discussed in contrast to the usual PN devices. Improvements over the conversion efficiencies attained by PN devices seem easily attainable if present technology is adaptable to the new problems involved. A program to fabricate PIN devices was started and several important techniques developed. Both diffused and alloyed junctions were formed over large area samples (1 cm x 1 cm) and the techniques allowed reproducible results. Except for the final problem of forming low resistance contacts on the diffused N layer, the technological problems of the planar PIN diode have been solved. (Author)