Investigation of the Band Structure of Group V Semi-Metals and the IV-VI Semiconductors

摘要

Galvanomagnetic measurements were made in single crystals of n-type bismuth-antimony alloys as a function of concentration in the range 0 - 13 at % Sb. The data have been analyzed in terms of two band model. The ratio of the two resistivity components P sub 33/P sub 11 suggests that the electrons in the lower concentration alloys are located at the same points in the Brillouin zone as those for pure bismuth and that the ratio of the various mobility components is not much influenced on alloying bismuth with antimony. (Author)