The Piezoresistance Effect in p-Type Pbte

摘要

The piezoresistance effect was measured in 21 single crystal samples of p-type PbTe. The piezoresistance coefficients pi sub 11, pi sub 12 and pi sub 44 were obtained by application of hydrostatic pressure, and uniaxial stresses in different crystallographic orientations. The temperature dependence of these coefficients was investigated in the range 300 K to 77 K for hole concentrations between 4.04 x 10 to the 17th power and 4.94 x 10 to the 19th power cu cm. The results of these measurements are discussed in terms of the band structure and transport properties of the material. (Author)