Thin-Film Polycrystalline Field-Effect Triode

摘要

The report includes data covering all work done on this contract. The last half of the program phased into the development of complementary thin-film transistor circuits, using tellurium for the P-type and cadmium selenide for the N-type semiconductors. The circuit used was a three-input NAND gate. To increase yield and to improve circuit operation and stability, a new mask was introduced into the fabrication procedure. Since this mask defined the source-drain lands and gap in one evaporation instead of two, the previous size and alignment problems were eliminated. The amount of penumbra was appreciably reduced because of smaller wire diameter. Faster switching was obtained, and circuit evaluation data gave evidence that many of the last circuits fabricated approached ideal performance. (Author)