Microwave Transistor Intermediate-Frequency Amplifier (2 Ghz)

摘要

A method of designing microstrip amplifiers is presented. Transmission line measurements for the transistors are converted to obtain the Z, Y, h, etc., parameters, and maximum available gain at the frequency of interest is then determined. Coupling networks are computed in the form of simple series L- and C-type structures, and width over height (W/h) as a function of frequency is determined. Using these techniques, the fabrication of two amplifiers is described and their performance data are shown. (Author)