A Study of Failure Mechanisms in Silicon Planar Epitaxial Transistors.

摘要

The report covers the entire 18-month period in this study of the mechanisms that lead to failure in silicon N-P-N planar epitaxial transistors. The approach taken was the division of the investigation into specific interest areas, each associated with a part of the transistor structure. The areas included: oxide and silicon dioxide interface; field induced junctions at the silicon surface; silicon (bulk); and metallization. (Author)