Heterocrystal Integrated Circuit Techniques

摘要

The report contains a summary of experimental work related to the following topics: (1) Use of aluminum oxide, silicon oxide, and silicon nitride as possible masking materials for selectively etching GaAs and Ge deposition in GaAs; (2) Isolation properties of GaAs sub SI as received from crystal processing and after oxide and germanium growth; (3) Device characteristics of junctions formed in germanium regions selectively grown in germanium and in gallium arsenide substrates. (Author)