Semiconductor Materials for Electroluminescence Diodes And Lasers

摘要

Techniques are described for the growth of single crystals of III-V and IV-VI compounds and of single crystals of alloys of these compounds. Detailed investigations in the growth of single crystals of PbTe-SnTe, InAs-GaAs, InAs-InSb and other III-V alloy systems are reported. The electrical, physical, and chemical characterization of the above crystals are described. Techniques are reported for controlling the stoichiometric deviations in Pb(1-x)Sn(x)Te crystals. (Author)