Simplified Engineering Techniques for Predicting Diode and Transistor Photocurrent

摘要

The report shows that equilibrium and nonequilibrium photocurrent can be accurately predicted for diodes without large contact overlap capacitance or long lifetime (TAU), predictions are made from simple electrical measurements using standardized procedures, charts, and nomographs. A feasible method for predicting transistor nonequilibrium photocurrent, from electrical parameters, for T > 0.1 TAU is presented, for diodes without large contact overlap or long lifetime (TAU SUB .1 > 20 microsec) equilibrium photocurrent values, predicted using the avalanche technique, are within +39% and -28% (one sigma level) of measured values. (Author)