Epitaxial Growth Mechanisms in Vacuum Deposited Thin Films

摘要

The mechanisms which lead to oriented overgrowth have been investigated with a view towards experimental and theoretical development of suitable models for nucleation and growth phenomena. Particular emphasis was placed on the role of common epitaxial features occurring independently of experimental conditions. Such features included the parallel alignment of close-packed rows of deposit atoms with directions in the substrate, long-range epitaxial effects and crystallite size distributions characteristic of the various growth stages. (Author)