Concentration Profiles of Two-Step Diffusions of Boron into Silicon

摘要

The concentration profiles of boron diffused into silicon were experimentally determined for two-step diffusions yielding surface concentrations near 10 to the 18th power/cu cm. The average diffusion coefficient of boron in silicon at 1150C was found. A flat portion of the experimental curves indicating a constant boron concentration near the silicon surface is explained on the basis of a segregation phenomenon at the silicon oxide-silicon interface. (Author)