Performance Characteristics of CW Silicon and Gallium Arsenide Avalanche Diode Oscillators

摘要

This report describes the important performance characteristics of both Si and GaAs CW avalanche diode oscillators. Power output, frequency stability, dc to R-F efficiency, tunability, spurious signal content and other important device parameters are presented. Also, operating life data are presented together with the results of some systems experiments, e.g., microwave receiver measurements which clearly demonstrate the practical value of these new devices. (Author)