Properties of Gallium Phosphide Green Electroluminescent Diodes

摘要

A study has been made of the electrical and optical properties of gallium Phosphide green electroluminescent diodes which were formed by zinc or beryllium diffusions into n-type sulfur-doped GaP grown by the vapor-phase epitaxial technique on GaAs substrates. The objective was to determine the dominant current transport mechanisms and the dominant radiative recombination processes and to study their dependences on the electron carrier concentration. (Author)