Investigation of GaAsxP1-x Alloys for High Speed Current Limiting Devices

摘要

The GaAsxP1-x single crystals used in the devices were grown by a vapor phase epitaxial technique. A brief description is presented and contact preparation is also described. The relative advantages and disadvantages of sandwich-like and planar-like structures are discussed, with emphasis on the differential resistance expected in the saturation range. The effects of temperature on diode characteristics are considered. Resistivity, mobility, Hall-coefficient, photoresistivity, and photo-Hall measurements are reported for crystals of alloy compositions near x = 0.70. Conclusions resulting from the experiments and plans for further research are discussed.