Thermal and Optical Emission Rates and Cross Sections from the Impurity Photocurrent and Photocapacitance Methods

摘要

Electrical and optical properties of impurity centers in semiconductors such as energy level scheme, thermal and optical cross sections, and thermal emission rates have been measured and studied using the steady state and transient photoconductivity measurements, infrared absorption, Hall effect and conductivity over a wide range of temperatures, thermally stimulated conductivity and other methods. In this paper, several measurement techniques of these thermal and optical parameters using reverse biased p-n junctions are discussed which have simple exponential decays since the capture rates are negligible. Detailed measurements have been made on the gold acceptor and donor centers in silicon.