A Study of Electronic States and Transport in Highly Doped Semiconductors

摘要

Impurity conduction in doped semiconductors is discussed using the Green's function for high impurity concentration at temperatures near zero. A stochastic method has also been used to investigate the electronic states in an aperiodic system. It is the object of this research to develop a method to carry out a systematic study of electronic structure and conduction mechanism in random lattices. (Author)