Semiconductor Materials for Electroluminescent Diodes and Lasers

摘要

The growth of high quality Pb(1-x)Sn(x)Te single crystals by the Czochralski method using liquid encapsulation is described. The control of the carrier density was achieved by growth from non-stoichiometric melts and by isothermal annealing in the presence of a cation-rich vapor. Extensive electrical measurements were made on samples prepared by all of the above techniques, and interpreted in light of the band-crossing model. Thin homo-epitaxial layers of Pb(1-x)Sn(x)Te alloys were prepared by liquid epitaxy and their physical and electrical properties were investigated. For comparison purposes, diffused and Schottky barrier junctions were also prepared and measured. High purity GaAs epitaxial layers on GaAs substrates were grown by the liquid epitaxial technique. Hall effect and capacitance measurements were taken in order to establish the quality and homogeneity of these layers. (Author)