Si - ZnS Heterojunctions. Ii. Single Crystal Films Of Zinc Sulphide on Silicon

摘要

A technique for the growth of single-crystal epitaxial films of zinc sulphide on silicon has been evolved. The film is grown by condensation of vapour sublimed from a zinc sulphide source in ultra-high vacuum. Optical, electron and scanning electron microscopy are used to examine the topography of the films produced, and X-ray and electron diffraction studies are used to evaluate the crystal structure of the deposits and substrates. (Author)