THIN FILM INFRARED MOSAIC SENSOR

摘要

The program developes a two dimensional crossed grid monolithic silicon-thin film photoconductor array designed for imaging in the 1 micrometer to 3 micrometer spectral region. The approach involved deposition of an array of thin film lead sulfide photoconductor detectors onto a similar silicon diode array on a one for one basis. Each element of the array consisted of a photoconductor in series with an isolating silicon diode, and the complete array consisted of 64 x 64 elements with 4 mil center-to-center spacing. Silicon diode arrays employing both junction and dielectric isolation were investigated. A number of devices were completed through photoconductor deposition and evaluated. Heavy emphasis was placed on detailed testing at intermediate fabrication steps in order to identify defects influencing yield. Very detailed evaluation of completed devices was also performed. (Author)