Short-Pulse RF Burnout Properties of Crystal Diode Mixers in the 4-mm Band

摘要

The short-pulse RF burnout properties of the commercially available crystal diode mixers in the 4-mm band were examined by use of stable, 1-ns, 70-GHz pulses of controlled amplitude. The examination included the four basic types of 40mm band diodes: silicon, germanium, and gallium arsenide point contacts, and an experimental Schottky barrier. Several 1N53s, silicon point contacts designed to operate at 8.6 mm, were included for comparison. (Author)