Diffusion of Impurities from the Gas Stream in Epitaxial Layers of GaP Grown by the Sendovitch Method

摘要

The task of uniformity of diffusion of impurities from a gas stream in an epitaxial layer grown by the 'sandwich' method has been solved theoretically. The criterion derived is determined by the uniformity of diffusion. The results of the calculations coincide qualitatively with the experimentally discovered uniformity of the diffusion in a layer of phosphide of gallium of the impurities of GaAs, falling into a layer as a result of the lining's corrosion. The possible causes of divergence of the experimental results from the theoretical have been considered. (Author)