A Study of Simultaneous Solid State Diffusion in Fabrication of Integrated Circuits (from Doped Silicafilms).

摘要

The study explores three areas. The first is the use of doped Silicafilms as diffusion sources. The second is the use of these Silicafilm diffusion sources in simultaneous diffusion of N and P-type regions. The third is the production of complementary insulated gate field effect transistors using Silicafilm diffusion sources in a triple-diffusion process. The doped Silicafilms were shown to be useful diffusion sources. The simultaneous diffusion was not achieved,and the conclusion is that even if simultaneous diffusion is possible using Silicafilm sources,the gain would not be worth the effort. The triple-diffusion process worked well,and the resulting devices are discussed in the last part of the report. (Author)