300C Transformer Rectifier.

摘要

Considerable progress was made towards the design and construction of rectifiers capable of 300C operation. A compatible metallization system,based on diffusion bonding tantalum shoes to an epitaxial GaAsP rectifier,was developed. A computer program was used to calculate temperature distributions and to optimize geometrical factors. Large-area,defect-free vapor hydride epitaxial n-type layers were grown;progress here was based on improved RCA-grown substrates,surface preparation,and the exclusion of oxygen during growth. (Author)