Characteristics of the Quenched-Domain Mode of Gunn-Effect Devices.

摘要

The purpose of the study is to investigate the theoretical and experimental characteristics of the quenched-domain mode of Gunn-effect devices. A realistic large-signal model is obtained by including such effects as unequal threshold and minimum domain-sustaining voltages,distinct domain formation and quenching processes,domain behavior in the presence of an RF voltage,voltage dependence of the domain width,and the displacement current. The analysis is carried out by obtaining an instantaneous current-voltage transfer characteristic for the device and using it to generate current waveforms corresponding to a given periodic voltage waveform. (Author)