Development of Microwave Integrated Circuit Noise Source.

摘要

The report covers work done on the development of a set of Microwave Integrated-Circuit noise source,suitable to be used in the frequency range of 2to 12.4GHz,using a single silicon avalanche diode. Noise theory and experiments to support it are described. Emphasis was put on the frequency band of 8to 12.4GHz,where 6prototypes were evaluated for noise output performance and temperature behavior. (Author)