首页> 美国政府科技报告 >Device Fabrication and Radiation Effects Studies of Various Semiconductors

【24h】

Device Fabrication and Radiation Effects Studies of Various Semiconductors

机译：各种半导体的器件制造和辐射效应研究

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

;Contents: A study of electron beam evaporated high-mobility indium antimonide and III-V compound semiconductor thin films; Radiation effects on hall and magnetoresistance devices of InSb bulk and thin films; Silicon and GaAsP metal-insulator-semiconductor capacitors and Te thin-film transistors.

著录项

作者
Kim, T. W.; Grannemann, W. W.;
展开▼
作者单位

展开▼
年度 1972
页码 p.1-134
总页数 134
原文格式 PDF
正文语种 eng
中图分类
关键词
Semiconductor devices ; Radiation damage ; Semiconductors ; Semiconducting films ; Indium antimonides ; Deposition ; Silicon ; Gallium arsenides ; Tellurium ; Capacitors ; Resistors ; Transistors ; Manufacturing methods ; Band theory of solids ; Hall effect ; Electron bombardment ; Neutron reactions ; Phosphides ; Vapor plating ; Mobility;

机译：半导体器件;辐射损伤;半导体;半导体薄膜;锑化铟;沉积;硅;砷化镓;碲;电容器;电阻器;晶体管;制造方法;固体带理论;霍尔效应;电子轰击;中子反应;磷化物;蒸镀;移动;

相似文献

外文文献
中文文献
专利

1. Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices [J] . A.P.Gnana Prakash, N. Pushpa Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2015,第Null期

机译：Pelletron促进剂在研究半导体器件高总剂量辐射效应中的应用
2. A Study of Difference in Reflow Characteristics Between Electroplated and Sputtered Cu in a Dual-Damascene Fabrication Process for Silicon Semiconductor Devices [J] . TAKASHI ONISHI, MASAO MIZUNO, TAKAO FUJIKAWA, Journal of Electronic Materials . 2011,第6期

机译：硅半导体器件双镶嵌制造工艺中电镀铜和溅射铜之间回流特性差异的研究
3. A Study of Difference in Reflow Characteristics Between Electroplated and Sputtered Cu in a Dual-Damascene Fabrication Process for Silicon Semiconductor Devices [J] . Takashi Onishi, Masao Mizuno, Takao Fujikawa, Journal of Electronic Materials . 2011,第6期

机译：硅半导体器件双镶嵌制造工艺中电镀铜和溅射铜之间回流特性差异的研究
4. Study of natural space radiation effects in semiconductor devices for selection of electronic parts [C] . Levinson, J., Barak, . 1995

机译：研究用于电子零件选择的半导体器件中的自然空间辐射效应
5. THE FABRICATION AND EXPERIMENTAL ANALYSIS OF METAL-INSULATOR-SEMICONDUCTOR DEVICES FOR RADIATION VULNERABILITY STUDIES. [D] . WILLIAMSON, THOMAS ALLEN. 1972

机译：用于辐射脆弱性研究的金属绝缘体-半导电体的制造和实验分析。
6. The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties [O] . Jozeph Park, Hyun-Jun Jeong, Hyun-Mo Lee, -1

机译：ZnON半导体中阴离子或空位之间的共振相互作用及其对薄膜器件性能的影响
7. Effects of radiation of outer space on the properties of semiconductor devices [O] . Стросінський С. В., Strosinskyy S. V. 2016

机译：外太空辐射对半导体器件性能的影响
8. The Fabrication and Experimental Analysis of Metal-Insulator-Semiconductor Devices for Radiation Vulnerability Studies [R] . Williamson, T. A., Grannemann, W. W. 1971

机译：用于辐射脆弱性研究的金属 - 绝缘体 - 半导体器件的制造和实验分析

Device Fabrication and Radiation Effects Studies of Various Semiconductors

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅