Microelectronic Techniques and Requirements for the Special Weapons Center Microelectronics Facility

摘要

The physical limitations of components used in hybrid microcircuits are reviewed. Consideration is given to effects of temperature, ionizing radiation, atomic displacement and pulsed power failure of junctions. Growth of silicon dioxide films on silicon substrates is discussed. The necessary equipment is listed and procedures for growing these films are given. Screen process printing of thick film integrated circuits is discussed, outlining all of the major steps for producing a thick film circuit. Sputtering of thin films is discussed briefly, outlining the physical differences in different types of sputtering. Facility objectives and requirements of the microelectronics facility are discussed and recommendations on equipment and personnel requirements are made. (Author)