High Temperature (250 deg C) SiC Power Module for Military Hybrid Electrical Vehicle Applications

摘要

In this paper, the authors present a line of newly developed high performance SiC power modules, HT-2000, for military systems and applications. The HT-2000 series of modules are rated to 1200V, are operational to greater than 100A, can perform at temperatures in excess of 250 deg C, and can be constructed with SiC MOSFETs, JFETs, or BJTs. The newly developed module implements a novel ultra-low parasitic packaging approach that enables high switching frequencies in excess of 100 kHz, and weighs in at just over 100 grams (offering >4x mass reduction in comparison with industry standard power brick packaging technology). The paper discusses testing results of these modules in actual system applications, including: (a) complete static characterization vs. temperature, and (b) switching performance.