首页> 美国政府科技报告 >100-Watt PEP Insulated-Gate Field-Effect Transistor for Operation from a 28-Volt Supply.

【24h】

100-Watt PEP Insulated-Gate Field-Effect Transistor for Operation from a 28-Volt Supply.

机译：用于28伏电源供电的100瓦pEp绝缘栅场效应晶体管。

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The objective of the contract is to develop an MOS transistor capable of a power output (PEP) of 100watts in the frequency band from 2to 32megahertz when operated from a 28-volt power supply. (Author)

著录项

作者
becke,hans w. white,joseph p.;
展开▼
作者单位

展开▼
年度 1972
页码 1-18
总页数 18
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
field effect transistors; manufacturing methodsfilms; high frequency; silicon; radiofrequency power;

机译：场效应晶体管;制造方法薄膜;高频;硅;射频功率;

相似文献

外文文献
中文文献
专利

1. RF and DC characteristics in Al_2O_3/Si_3N_4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure [J] . Narihiko Maeda, Takashi Makimura, Takashi Maruyama, Physica Status Solidi. A, Applications and Materials Science . 2006,第7期

机译：具有再生长欧姆结构的Al_2O_3 / Si_3N_4绝缘栅AlGaN / GaN异质结构场效应晶体管的RF和DC特性
2. DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors [J] . Narihiko MAEDA, Takashi MAKIMURA, Takashi MARUYAMA, Japanese Journal of Applied Physics. Part 2, Letters . 2005,第20a23期

机译：Al_2O_3 / Si_3N_4绝缘栅AlGaN / GaN异质结构场效应晶体管的直流和射频特性
3. High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer [J] . Chengxin Wang, Narihiko Maeda, Masanobu Hiroki, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第11期

机译：超薄Al_2O_3 / Si_3N_4双层绝缘栅AlGaN / GaN异质结构场效应晶体管的高温特性
4. Physics-based compact models for insulated-gate field-effect biosensors, landau-transistors, and thin-film solar cells [C] . Alam Muhammad A., Dak Piyush, Wahab Muhammad A., IEEE Custom Integrated Circuits Conference . 2015

机译：基于物理的紧凑模型，用于绝缘栅场效应生物传感器，兰道晶体管和薄膜太阳能电池
5. Design and characterization of integrating silicon junction field-effect transistor amplifiers for operation in the temperature range 40-77 K. [D] . Alwardi, Milad. 1989

机译：集成硅结场效应晶体管放大器的设计和特性，可在40-77 K的温度范围内工作。
6. High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors [O] . Chang-Young Choi, Ji-Hoon Lee, Jung-Hyuk Koh, 2010

机译：纳米带场效应晶体管的高温稳定运行
7. Modelling of insulated-gate field-effect transistors. [O] . Youssef El-Mansy -1

机译：绝缘栅场效应晶体管的建模。
8. 100-Watt PEP Insulated-Gate Field-Effect Transistor for Operation from a 28Volt Supply. [R] . ditrick,norman h. richards,benjamin w. 1972

机译：用于28V电源供电的100瓦pEp绝缘栅场效应晶体管。

100-Watt PEP Insulated-Gate Field-Effect Transistor for Operation from a 28-Volt Supply.

摘要

著录项

相似文献

相关主题

期刊订阅