Interface Phenomena - Integrated Circuits Oxides

摘要

During the second half year of the contract, work was continued on the ion transport in silicon dioxide. Further work on the model in which the potential wells are distributed over a range of energy walls was carried out. Some preliminary results have been obtained on the transport phenomena which prove to be very interesting. During this period, it was also shown that the direct determination of the built-in-voltage in MOS structures using the photoelectric technique is possible. A photoelectric method of storing charge in a floating gate MOS memory has been considered. (Author)