400 Ampere High Power Transcalent Semiconductor Thyristor Device

摘要

The design of a 400 Ampere High Power Transcalent Thyristor is described in this report. Work performed was devoted to the development of a silicon thyristor wafer which could be cooled from both sides in the transcalent package. The heat pipes that are attached to the silicon thyristor wafer are a simple self-contained thermodynamic system which exhibits an effective thermal conductivity several orders of magnitude greater than copper. Design of the devices is discussed with emphasis on the design and fabrication of the Silicon Thyristor Wafer, metallization techniques, and heat pipe construction. (Author)