CdGeAs2 and CdGeP2 Chalcopyrite Materials for Infrared Nonlinear Optics

摘要

The work reports on new crystals for infrared nonlinear optics. The investigated crustals are II-IV-V2 semiconductor compounds with chalcopyrite structure. Both theoretical and experimental results are given on growth technique, material quality problems, and semiconducting properties that effect the optical properties. The linear and the nonlinear optical properties are discussed. The bandstructute of the chalcopyrites near the Brillouin zone center has been determined, and good agreement between the calculated and the measured intraband absorption in p-type CdGeAs2 was found. (Author Modified Abstract)