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Output Capability of Electron Beam-Semiconductor Bandpass Amplifiers using Large-Area Diodes.

机译：使用大面积二极管的电子束半导体带通放大器的输出能力。

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摘要

Design equations for electron beam-semiconductor (EBS) bandpass amplifiers using large-area diodes are discussed. The large-area diodes are used to enhance power output and efficiency, particularly in the case of average-power amplifiers. Both class A and class B modes are treated. (Author)

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作者
Weiner, M.; Braun, M.;
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年度 1973
页码 1-3
总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Band pass amplifiers; Semiconductor diodes; Electron beams; Power amplifiers; Reprints; Electron beam semiconductor devices; Electron beam semiconductor bandpass amplifiers;

机译：带通放大器;半导体二极管;电子束;功率放大器;重印;电子束半导体器件;电子束半导体带通放大器;

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8. Power Capability of Electron Beam-Semiconductor Amplifiers using Large Area Diodes [R] . Weiner, M. 1972

机译：使用大面积二极管的电子束半导体放大器的功率能力

Output Capability of Electron Beam-Semiconductor Bandpass Amplifiers using Large-Area Diodes.

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